a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue north hollywood, ca 91605 (818) 982 - 1200 fax (818) 765 - 300 4 1/1 specifications are subject to change without notice. characteristics t c = 25 o c symbol none test conditions minimum typical maximum units bv cbo i c = 1 ma 45 v bv cer i c = 5 ma r be = 10 w 45 v bv ebo i e = 1 ma 3.5 v i ces v ce = 35 v 1.0 ma h fe v ce = 5.0 v i c = 100 ma 30 300 --- p g h h c v cc = 35 v p out = 2 w f = 1025 - 1150 mhz 9.0 35 db % npn silicon rf power transistor AVD002F description: the asi AVD002F is designed for features: omnigold ? metalization system maximum ratings i c 250 ma v cc 37 v p diss 10 w @ t c 100 o c t j - 65 o c to +200 o c t stg - 65 o c to +150 o c q q jc 10 o c/ w package style .250 2l flg(b) order code: asi10552 minimum inches / mm 1.050 / 26.67 .120 / 3.05 .245 / 6.22 .552 / 14.02 .790 / 20.07 b c d e f g a maximum .255 / 6.48 .572 / 14.53 .810 / 20.57 .140 / 3.56 inches / mm h .003 / 0.08 .007 / 0.18 dim k i j .052 / 1.32 .072 / 1.83 .130 / 3.30 .088 x 45 chamfer a b ? d e f g h i k c j .100 x 45 .095 / 2.41 .105 / 2.67 .285 / 7.24 .210 / 5.33 .120 / 3.05
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